Plasma-Therm 790 MF Reactive Ion Etch (RIE) Plasma System

Plasma-therm 790 MF is a stand-alone Reactive Ion Etching (RIE) system with showerhead gas distribution and water cooled RF platen. It could be used for silicon, silicon dioxide or silicon nitride etching process. The chamber could reach a base pressure in the 3x10-5 Torr range, and it can be operated in the pressure range of 10mTorr to 100mTorr. The following gases are installed: CF4, CHF3, SF6 and O2. The flow rate for each gas is set by a mass-flow controller (MFC), and the pressure is controlled separately by a throttle valve between the chamber and the pump. All system functions are controlled from the computer. The control program has both manual and automatic modes. Comparison of the RIE systems available in the MRL shared research facilities: Substrates (e.g., Si, Glass, etc.), 2D Transition-metal dichalcogenides, dielectrics (metal oxides, nitrides, etc.) (*) Discuss with staff before actually using any of those materials and if other materials are needed in the process. This is required for new and existing experienced users. (**) Etching rate and quality will depend on several factors (type of material, sample thickness, pattern details, masking parameters, etc.). A discussion with staff is important in order to decide tool assignment and feasibility. Manufacturer's website: http://www.plasma-therm.com/etch-rie.html